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POWER MANAGEMENT Description
The SC1302A/B/C family are low cost dual low-side MOSFET drivers. These drivers accept TTL-compatible inputs and are capable of supplying high current outputs (> 2A peak) to external MOSFET's. Fast switching allows operation up to 1 MHz. The SC1302A/B/C is available in three configurations: dual non-inverting, dual inverting and one inverting plus one non-inverting output. An under-voltage-lock-out circuit guarantees that the driver outputs are low when Vcc is less than 4.5V (typ). An internal temperature sensor shuts down the driver in the event of over temperature.
Dual High Speed Low-Side MOSFET Driver
Features
SC1302A/B/C
u +4.5V to +16.5V operation u Fast rise and fall times (20ns typical with 1000pf load) u Dual MOSFET driver u 2A peak drive current u 40ns propagation delay u 8-pin SOIC / MSOP packages u Enable/disable control u TTL-compatible input u Under voltage lockout with hysterisis u Low shutdown supply current u Over temperature protection u ESD protection u Dual inverting/non-inverting and inverting/non-inverting configurations
Applications
u Switch-mode power supplies u Battery powered applications u Solenoid and motor drives
Typical Application Circuit
+12V Vload
10uF
0.1uF Load A SC1302A 6 VCC Load B
InputA
2 1 8
INA OUTA EN SHDN OUTB INB GND 3
7
5
InputB 4
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SC1302A/B/C
POWER MANAGEMENT Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied.
Parameter Supply Voltage Operating Supply Voltage Input Voltages Peak Output Currents Enable Voltage Shutdown Voltage Continuous Power Dissipation Operating Temperature Range Thermal Resistance Junction to Ambient (MSOP) Thermal Resistance Junction to Ambient (SOIC) Storage Temperature Range Lead Temperature (Soldering)10 sec ESD Rating (Human Body Model) Symbol VC C VC C V INA, VINB I OUTA, I OUTB V EN V SHDN Pd TA JA JA T STG T LEAD ESD Typ -0.3 to 20 -0.3 to 16.5 -0.3 to VC C 3 -0.3 to VC C -0.3 to VC C Internally limited -40 to +85 206 165 -65 to +150 260 2 Units V V V A V V W C C/W C/W C C kV
DC Electrical Characteristics
Unless otherwise specified: -40C < TA < 85C, VCC = 12V, VIN = 5V, VEN = 5V, VSHDN = 5V
Parameter Supply Current Quiescent Current Quiescent Current Quiescent Current Under-Voltage Lockout Threshold Voltage Hysteresis Enable Enable Voltage Disable Voltage Delay to Output (1) Delay to Output (1) Enable Input Current V EN V EN t D_EN t D_DIS I EN 0 < VEN < V CC 0 < VEN < V CC EN from low to high EN from high to low 0 < VEN < V CC 10 70 55 14 19 2.0 0.8 V V ns ns A V START VSHDN =V EN =VINA =VINB = 3V VSHDN =V EN =VINA =VINB = 3V 4.2 250 4.5 320 4.7 475 V mV IQ IQ IQ V CC < V START VEN =V SHDN =VINA =VINB = 3V VSHDN =0V 1 5.7 3 1.8 8.1 8 mA mA A Symbol Conditions Min Typ Max Units
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SC1302A/B/C
POWER MANAGEMENT DC Electrical Characteristics (Cont.)
Unless otherwise specified: -40C < TA < 85C, VCC = 12V, VIN = 5V, VEN = 5V, VSHDN = 5V
Parameter Input High Level Input Voltage Low Level Input Voltage Input Current VIH VIL I IN 0 < VIN < VCC 0 < VIN < VCC 0 < VIN < VCC Non-Inverting Input(s) of SC1302A/C 0 < VIN < VCC Inverting Input(s) of SC1302B/C(2) Output Output Peak Current I PK_SOURCE I PK_SINK Shutdown SHDN Input Voltage High SHDN Input Voltage Low SHDN Pin Current Thermal Shutdown Over Temperature Trip Point (1) Hysteresis(1) TJ_OT 150 10 C C VSHDN VSHDN I SHDN VSHDN = 5V 32 2 0.3 40 V V A VOUT = 0.5V, t PW < 10uS VOUT = VCC - 0.5V, tPW < 10uS 1600 1600 mA mA 13 2.0 0.8 18.5 -8 V V A A Symbol Conditions Min Typ Max Units
AC Electrical Characteristics
Unless otherwise specified: TA = 25C, VCC = 12V, VEN = 5V, CL = 1000pF
Parameter Rise time(1) Fall time(1) Propagation delay time(1) Propagation delay time(1) Symbol tR tF t D1 t D2 Conditions See Timing Diagram See Timing Diagram See Timing Diagram See Timing Diagram Min Typ 20 20 53 41 Max Units ns ns ns ns
Note: (1) Guaranteed by design not tested in production. (2) Negative sign indicates that the input current flows out of the device.
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SC1302A/B/C
POWER MANAGEMENT Timing Diagram
5V 90%
Input
0V
10% tR tF 90% 10% 90% 10%
N o n -inverting Output SC1302A Inverting Output SC1302B
90%
tF
tR 90% 10%
10% t D2
t D1
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SC1302A/B/C
POWER MANAGEMENT Pin Configuration
Top View SC1302A (Dual Non-Inverting)
EN INA GND INB 1 2 3 4 8 7 6 5 SHDN OUTA VCC OUTB
Ordering Information
Part Number SC1302AISTR SC1302BISTR SC1302CISTR SC1302AIMSTR SC1302BIMSTR SC1302CIMSTR MSOP-8 -40C to +85C SOIC-8 -40C to +85C Package Temp. Range (T A)
(8-Pin SOIC or MSOP)
Note: Only available in tape and reel packaging. A reel contains 2500 devices.
Top View SC1302B (Dual Inverting)
EN INA GND INB 1 2 3 4 8 7 6 5
Top View SC1302C (Inverting + Non-Inverting)
EN INA GND INB 1 2 3 4 8 7 6 5
SHDN OUTA VCC OUTB
SHDN OUTA VCC OUTB
(8-Pin SOIC or MSOP)
(8-Pin SOIC or MSOP)
Pin Descriptions
Pin # 1 SC1302A EN SC1302B EN SC1302C EN Pin Function Enable/disable control. When the EN is driven low, both outputs are low. When left open, both outputs are low. Enable both drivers by tying EN pin to a voltage greater than 2V. TTL-compatible input to the driver A. When left open, Pin 7 is low. Ground. TTL-compatible input to the driver B. When left open, Pin 5 is low. Output gate drive B for external MOSFET. Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held low. Output gate drive A for external MOSFET. Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull below 0.3V for low-power shut down.
2 3 4 5 6 7 8
INA GND INB OUTB VCC OUTA SHDN
INA GND INB OUTB VCC OUTA SHDN
INA GND INB OUTB VCC OUTA SHDN
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SC1302A/B/C
POWER MANAGEMENT Block Diagrams
EN VCC EN VCC
INA BIAS
P R EDRIVER
OUTA INA BIAS
PREDRIVER
OUTA
SHDN
BANDGAP
SHDN
BANDGAP
BIAS
INB
PRE DRIVER
BIAS
OUTB INB
PRE DRIVER
OUTB
SC1302A
GND
GND
SC1302B
EN
VCC
INA BIAS
P R EDRIVER
OUTA
SHDN
BANDGAP
BIAS
INB
PRE DRIVER
OUTB
GND
SC1302C
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SC1302A/B/C
POWER MANAGEMENT Typical Characteristics
Rise and Fall Time vs. Supply Voltage 25
CL = 1000pF TA = 25C
Rise and Fall Time vs. Capacitive Load 80
VCC = 12V f = 200KHz T A = 25C
60 Time (ns) Time (ns) 20 tf
tf 40 tr 20
15
tr
10 4 8 12 16 Supply Voltage (V)
0 100
1000 Capacitive Load (pF)
10000
Supply Current vs. Capacitive Load 40
VCC = 12V One Driver Running T A = 25C
Input Pin Current 15
Non-inverting
Supply Currnt (mA)
30
10 5
Inverting
20
200KHz
Iin (uA)
100KHz
0 -5 -10
10
0 100
1000 Capacitive Load (pF)
10000
0
4 Vin (V)
8
12
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SC1302A/B/C
POWER MANAGEMENT Applications Information
The SC1302A/B/C is a high speed, high peak current dual MOSFET driver. It is designed to drive power MOSFETs with ultra-low rise/fall time and propagation delays. As the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While discrete solution can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1032A/B/C presents a total solution for the high-speed, high power density applications. Wide input supply range of 4.5V - 16.5V allows use in battery powered applications as well as distributed power systems. Supply Bypass and Layout A 4.7F to 10F tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1F ceramic capacitor in parallel are recommended as supply bypass to control switching and supply transients. As with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1302A/B/C. Attention should be paid to the proper placement of the driver, the switching MOSFET and the bypass capacitors. The driver should be placed as close as possible to the external MOSFET's to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. A resistor in the range of 10W could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should also be placed closely between Vcc and GND of the driver. A Schottky diode may be used to connect
the ground and the output pin to avoid latch-ups in some applications.
MOSFET is constant. The power delivered from the power supply can be estimated based on this simplification. The energy needed to charge the capacitor is given by: 1 E ON = C V 2 2 where C is the load capacitance and V is the output voltage swing of the driver. During turn off, the same amount of energy is dumped to the ground. Therefore, the energy dissipated in one switching cycle is:
E TOTAL = C V2
The power dissipation due to the gate driving actions is given by: PGATE = f C V2 where, f is the switching frequency. with VCC =12V, C=1nF and f=200kHz, the power dissipation per output is:
PGATE = (200kHz) (1nF) (12)2 = 29mW
The corresponding supply current is:
I= PGATE 29 mW = = 2. 4mA VCC 12 V
Thermal Information The driver's junction temperature must be kept within the rated limit at any time. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150oC, the internal protection circuit will be triggered to shut down the gate driver. The power dissipation of the SC1302A/B/C should be derated according to the following formula:
Power Dissipation < 125C - TA jA
Drive Capability and Power Dissipation The SC1302A/B/C is able to deliver 1.6A peak current for driving capacitive loads, such as MOSFET's.
Fast switching of the MOSFET's significantly reduces where TA = ambient temperature. switching losses for high frequency applications. Thermal stress is reduced and system reliability is improved. For simplicity, we assume that the gate capacitance of a
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SC1302A/B/C
POWER MANAGEMENT Outline Drawing - MSOP-8
Land Pattern - MSOP-8
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SC1302A/B/C
POWER MANAGEMENT Outline Drawing - SO-8
Land Pattern - SO-8
Contact Information Contact Information
Semtech Corporation Power Management Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
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